Umzekelo | Ingcaciso | |||
I-KN01M | x | x | x | Igalelo lexabiso lokutshintsha, imveliso |
Umjelo | S | Umqondiso | ||
D | Zimbini | |||
Igalelo | C | Ungeniso lokutshintsha olungenakwenziwa | ||
S | Igalelo lokutshintsha okusondele (ubonelelo lwe-8.2V) | |||
Isiphumo | J | Imveliso yokudlulisa | ||
N | Imveliso yomqokeleli weTransistor |
Hambisa ukuchaneka | ±0.2%×FS |
Indawo yengozi | Isiginali yengeniso ye-passive lunxibelelwano olusulungekileyo lokutshintsha. |
Uphawu longeniso oluvumelekileyo | Umqondiso osebenzayo: Sn = 0 , Yangoku< 0 .2mA; I-Sn ayinasiphelo, yangoku< 3mA ; I-Sn yi-max.sensing distance, yangoku yi-1.0-1.2mA |
Indawo yokhuseleko uphawu lwemveliso | I-Relay NC (HAYI) isiphumo soqhagamshelwano, vumela (Ukuxhathisa) umthwalo: AC125V 0.5A,DC60V 0.3A,DC30V 1A Vula imveliso yomqokeleli: I-Passive, unikezelo lwangaphandle: <40V DC, tshintsha frequency≤ 5kHz. Imveliso yangoku≤ 60mA , isiphaluka esifutshane sangoku< 100mA . |
Esebenzayo | Ukutshintsha okusondele, iiswitshi ezisebenzayo kunye nezingazenziyo, umfowunelwa owomileyo (ukutshintsha koxinzelelo olukhuselekileyo ngaphakathi |
Ukunikezwa Amandla | DC 24V±10% |
Ukutya umbane | 2W |
Ubungakanani bezindlu | W× H× D ( 22 . 6 * 100 . 3 * 113 . 3 ) mm |